We value your privacy

We use cookies to enhance your browsing experience, serve personalized ads or content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies.

Customize Consent Preferences

We use cookies to help you navigate efficiently and perform certain functions. You will find detailed information about all cookies under each consent category below.

The cookies that are categorized as "Necessary" are stored on your browser as they are essential for enabling the basic functionalities of the site. ... 

Always Active

Necessary cookies are required to enable the basic features of this site, such as providing secure log-in or adjusting your consent preferences. These cookies do not store any personally identifiable data.

No cookies to display.

Functional cookies help perform certain functionalities like sharing the content of the website on social media platforms, collecting feedback, and other third-party features.

No cookies to display.

Analytical cookies are used to understand how visitors interact with the website. These cookies help provide information on metrics such as the number of visitors, bounce rate, traffic source, etc.

No cookies to display.

Performance cookies are used to understand and analyze the key performance indexes of the website which helps in delivering a better user experience for the visitors.

No cookies to display.

Advertisement cookies are used to provide visitors with customized advertisements based on the pages you visited previously and to analyze the effectiveness of the ad campaigns.

No cookies to display.

Oil & Gas, Crude Oil, Gas, Petrol, Exploration, Refinery, Upstream, Oil Price, LPG & Solar

Follow us
Press Releases

Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module

by

For extra powerful and efficient inverter systems used in railways, electric power systems and more

TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module, featuring dual-type 3.3kV withstand voltage and 6.0kVrms dielectric strength, on May 31. The new module is expected to support superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. It will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2023 in Nuremberg, Germany from May 9 to 11.

Mitsubishi Electric has already released four full-SiC modules and two 3.3kV high-voltage dual-type LV100 modules. To further contribute to high power output, efficiency and reliability in inverters for large industrial equipment, the company will soon begin providing samples of its new module, which reduces switching loss as an SiC-MOSFET with a built-in SBD and an optimized package structure.

Product Features
1)

SBD-embedded SiC-MOSFET reduces power loss and contributes to inverter output, efficiency and reliability

  • SBD-embedded SiC-MOSFET and optimized package structure reduce switching loss by 91% compared to company’s existing Si power module and by 66% compared to existing SiC power module, thereby reducing inverter power loss and contributing to higher output and efficiency.
  • SBD-embedded SiC-MOSFET and optimized current capacity improve inverter reliability.

For the full text, please visit: www.MitsubishiElectric.com/news/

Contacts

Customer Inquiries
Semiconductor & Device Marketing Dept.A and Dept.B

Mitsubishi Electric Corporation

www.MitsubishiElectric.com/semiconductors/

Media Inquiries
Takeyoshi Komatsu

Public Relations Division

Mitsubishi Electric Corporation

Tel: +81-3-3218-2346

prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

Share:
0
Tags:
a
Cool
0
a
Cool
0
a
Dislike
0
Geeky
0
a
Like
0
a
Like
0
a
LOL
0
a
Love
0
a
Love
0
a
NSFW
0
oilandgaspress
0
OMG
0
a
WTF
0
#FOLLOW US ON INSTAGRAM